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1

Mechanistic studies of the initial stages of etching of Si and SiO2 in a CHF3 plasma

Ch. Cardinaud, G. Turban

Journal:

Applied Surface Science

Année:

1990

Langue:

english

Fichier:

PDF, 967 KB

english, 1990

2

Characterisation of TiN coatings and of the TiN/Si interface by X-ray photoelectron spectroscopy and Auger electron spectroscopy

P.-Y. Jouan, M.-C. Peignon, Ch. Cardinaud, G. Lempérière

Journal:

Applied Surface Science

Année:

1993

Langue:

english

Fichier:

PDF, 625 KB

english, 1993

3

High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithography

F. Gaboriau, M.C. Peignon, A. Barreau, G. Turban, Ch. Cardinaud, K. Pfeiffer, G. Bleidießel, G. Grützner

Journal:

Microelectronic Engineering

Année:

2000

Langue:

english

Fichier:

PDF, 667 KB

english, 2000

4

Etching mechanisms of Si and SiO 2 in fluorocarbon ICP plasmas: analysis of the plasma by mass spectrometry, Langmuir probe and optical emission spectroscopy

Gaboriau, F, Cartry, G, Peignon, M-C, Cardinaud, Ch

Journal:

Journal of Physics D Applied Physics

Année:

2006

Langue:

english

Fichier:

PDF, 612 KB

english, 2006

5

Silicon damage and residue overlayer caused by rie and ribe processes with CHF3

Ch. Cardinaud, G. Turban, B. Grolleau, J.P. Grandchamp, C. Lejeune, P. Scheiblin, E. Collard

Journal:

Applied Surface Science

Année:

1989

Langue:

english

Fichier:

PDF, 469 KB

english, 1989

6

Structural and electrical properties of the interfacial layer in sputter deposited LaAlO3/Si thin films

V. Edon, M.C. Hugon, B. Agius, C. Cohen, Ch. Cardinaud, C. Eypert

Journal:

Thin Solid Films

Année:

2007

Langue:

english

Fichier:

PDF, 607 KB

english, 2007

7

Novel linear and crosslinking polymers for nanoimprinting with high etch resistance

K. Pfeiffer, M. Fink, G. Bleidiessel, G. Gruetzner, H. Schulz, H.-C. Scheer, T. Hoffmann, C.M. Sotomayor Torres, F. Gaboriau, Ch. Cardinaud

Journal:

Microelectronic Engineering

Année:

2000

Langue:

english

Fichier:

PDF, 861 KB

english, 2000

8

SiO2/Si selectivity in high density CHF3/CH4 plasmas: Role of the fluorocarbon layer

L. Rolland, M.C. Peignon, Ch. Cardinaud, G. Turban

Journal:

Microelectronic Engineering

Année:

2000

Langue:

english

Fichier:

PDF, 351 KB

english, 2000

9

Surface modification of Si-containing polymers during etching for bilayer lithography

D. Eon, L. de Poucques, M.C. Peignon, Ch. Cardinaud, G. Turban, A. Tserepi, G. Cordoyiannis, E.S. Valamontes, I. Raptis, E. Gogolides

Journal:

Microelectronic Engineering

Année:

2002

Langue:

english

Fichier:

PDF, 163 KB

english, 2002

10

[IEEE IEEE 29th International Conference on Plasma Sciences - Banff, Alta., Canada (26-30 May 2002)] IEEE Conference Record - Abstracts. 2002 IEEE International Conference on Plasma Science (Cat. No.02CH37340) - Resist plasma etching for 157 nm lithography

Eon, D., Cartry, G., Peignon, M.C., Cardinaud, Ch., Tserepi, A., Cordoyiannis, G., Valamontes, E.S., Raptis, I., Gogolides, E.

Année:

2002

Langue:

english

Fichier:

PDF, 75 KB

english, 2002

11

[IEEE IEEE 29th International Conference on Plasma Sciences - Banff, Alta., Canada (26-30 May 2002)] IEEE Conference Record - Abstracts. 2002 IEEE International Conference on Plasma Science (Cat. No.02CH37340) - Time resolved Langmuir probe measurements in inductively coupled plasmas

Cartry, G., Eon, D., Raballand, V., Gaboriau, F., Peignon, M.C., Cardinaud, Ch.

Année:

2002

Langue:

english

Fichier:

PDF, 83 KB

english, 2002

12

Etching mechanisms of Si and SiO[sub 2] in inductively coupled fluorocarbon plasmas: Correlation between plasma species and surface etching

Gaboriau, F., Fernandez-Peignon, M-C., Cartry, G., Cardinaud, Ch.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2005

Langue:

english

Fichier:

PDF, 407 KB

english, 2005

13

Etching processes of tungsten in SF6-O2 radio-frequency plasmas

Peignon, M. C., Cardinaud, Ch., Turban, G.

Journal:

Journal of Applied Physics

Année:

1991

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1991

14

New polymer materials for nanoimprinting

Schulz, H., Scheer, H.-C., Hoffmann, T., Sotomayor Torres, C. M., Pfeiffer, K., Bleidiessel, G., Grützner, G., Cardinaud, Ch., Gaboriau, F., Peignon, M.-C., Ahopelto, J., Heidari, B.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2000

Langue:

english

Fichier:

PDF, 967 KB

english, 2000

15

[IEEE IEEE 29th International Conference on Plasma Sciences - Banff, Alta., Canada (26-30 May 2002)] IEEE Conference Record - Abstracts. 2002 IEEE International Conference on Plasma Science (Cat. No.02CH37340) - Selective and deep etching of SiO/sub 2/ in high density low pressure fluorocarbon plasmas

Gaboriau, F., Cartry, G., Peignon, M.-C., Cardinaud, Ch.

Année:

2002

Langue:

english

Fichier:

PDF, 93 KB

english, 2002

16

Selective and deep plasma etching of SiO[sub 2]: Comparison between different fluorocarbon gases (CF[sub 4], C[sub 2]F[sub 6], CHF[sub 3]) mixed with CH[sub 4] or H[sub 2] and influence of the residence time

Gaboriau, F., Cartry, G., Peignon, M-C., Cardinaud, Ch.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2002

Langue:

english

Fichier:

PDF, 691 KB

english, 2002

17

Etch product identification during - RIE of InP using mass spectrometry

Feurprier, Y, Cardinaud, Ch, Grolleau, B, Turban, G

Journal:

Plasma Sources Science and Technology

Année:

1997

Langue:

english

Fichier:

PDF, 219 KB

english, 1997

18

Surface Modification of Positive Photoresist Mask during Reactive Ion Etching of Si and W in SF[sub 6] Plasma

Journal:

Journal of The Electrochemical Society

Année:

1991

Langue:

english

Fichier:

PDF, 636 KB

english, 1991

19

Etching of low-k materials in high density fluorocarbon plasma

Eon, D., Raballand, V., Cartry, G., Peignon-Fernandez, M.-C., Cardinaud, Ch.

Journal:

The European Physical Journal Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 701 KB

english, 2004

20

Analyse XPS des surfaces de Si et SiO2 exposées aux plasmas de CHF3 et CHF3—C2F6. Polymérisation et gravure

Cardinaud, Ch., Rhounna, A., Turban, G., Grolleau, B.

Journal:

Revue de Physique Appliquée

Année:

1989

Langue:

french

Fichier:

PDF, 1.70 MB

french, 1989